MTP60N06 |
RFQ for MTP60N06 |
![]() |
| Product | Manufacturers | Pack | D/C |
| MTP60N06 | - | TO-3P | 04+ |
Features |
| • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperature |
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
60 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 30 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ @TC=100°C - Single Pulse (tp 10 s) |
ID ID IDM |
60 42.3 180 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
150 1.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25Vdc,VGS = 10Vdc, Vdc,Peak IL =60Apk, L = 0.3mH, RG = 25) |
EAS |
540 |
mJ |